Reaction of GeO2 with Ge and crystallization of GeO2 on Ge

Min Xie, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

Despite a renewed interest in germanium (Ge) as a material for beyond the silicon (Si) era for electronic and photonic applications, the GeO2/Ge interface remains to be controlled for making the best of Ge's advantages. Not only electrical challenges but also structural challenges must be considered. The crystallization of GeO2 on Ge without the desorption of GeO is clearly demonstrated. This demonstration means that the desorption of GeO observed in a GeO2/Ge stack is not the sole indicator of deterioration of the GeO2/Ge gate stack. Moreover, a study using atomic force microscopy demonstrates that a nonuniform reaction at the GeO2/Ge interface [with root mean square (rms) roughness of 2.3 nm] is observed on the initially flat Ge surface (rms: 0.3 nm). Furthermore, a reaction at the GeO2/Si interface is experimentally investigated in comparison with the GeO2/Ge case, and crystalline Ge islands are demonstrated to form on Si. These findings are of fundamental interest as well as of technical importance from the viewpoint of Ge-based electronics and photonics.

本文言語英語
論文番号024101
ジャーナルJournal of Applied Physics
127
2
DOI
出版ステータス出版済み - 1 14 2020
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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