Reactive-fast-atom beam etching of GaAs using Cl2 gas

Fusao Shimokawa, Hidenao Tanaka, Yuji Uenishi, Renshi Sawada

研究成果: Contribution to journalArticle査読

58 被引用数 (Scopus)

抄録

GaAs dry etching using reactive-fast-atom beam etching to obtain an etched mirrorlike surface is investigated. An etch rate of 0.1-0.6 μm/min is obtained when Cl2 gas is used, which is 50-100 times faster than when Ar gas is used. The etch rate ratio between GaAs and photoresist AZ-1350J is more than 30. As a result, a trench with a depth of more than 10 μm and a width of less than 2 μm is easily fabricated under the etch conditions of a Cl2 gas pressure of 5-6.5×10-2 Pa, an accelerate voltage of 1.5-1.8 kV, and a substrate temperature of about 100 °C. The radiation damage caused by this etching is very small, and it is similar to that caused by wet chemical etching, in spite of the relatively higher accelerator voltage. The thickness of an induced damage layer is only 150 Å. It is found that the radiation damage induced by reactive-fast-atom beam etching decreased with an increase of the etch rate. It is confirmed that vertical, smooth, damage-free etching can be easily attained with reactive-fast-atom beam etching.

本文言語英語
ページ(範囲)2613-2618
ページ数6
ジャーナルJournal of Applied Physics
66
6
DOI
出版ステータス出版済み - 1989
外部発表はい

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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