Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy

X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi

研究成果: ジャーナルへの寄稿学術誌査読

1 被引用数 (Scopus)

抄録

In situ reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) observations were performed to monitor and characterize the growth processes and surface morphology of GaN on AlxGa1-xN surface in gas-source molecular beam epitaxy. It was found that the growth mode can be changed by introducing Si before GaN growth, where the Si is believed to play an important role in the change of the AlxGa1-xN surface free energy. Without introducing Si, the GaN growth mode was two-dimensional and (1 × 3) reconstruction was observed. The growth mode of GaN was changed from two-dimensional to three-dimensional by introducing Si on the AlxGa1-xN surface. Nanoscale GaN dots were successfully formed on AlxGa1-xN/6H-SiC(0 0 0 1) surfaces. Furthermore, the density of the GaN dots was found to be dependent on the amount of Si dose and the growth temperature.

本文言語英語
ページ(範囲)147-152
ページ数6
ジャーナルJournal of Crystal Growth
189-190
DOI
出版ステータス出版済み - 6月 15 1998
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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