Recent progress of SiC hot-wall epitaxy and its modeling

Shinichi Nishizawa, Michel Pons

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抜粋

From the engineering point of view, SiC hot-wall epitaxy is a very important process in SiC semiconductor processes. There are lots of experimental reports on SiC hot-wall epitaxy. They discussed the growth rate, surface morphology, doping concentration, etc. Recently, the effect of face polarity is also made clear. However, each report mentioned the particular results that strongly depend on the experimental conditions and reactor design. In addition, the discussion with inlet condition such as source gas C/Si ratio, not the depositing surface condition, leads to the confusion. In order to understand and try to design and optimize the hot-wall CVD reactor, a numerical approach is attempted. The authors have tried to make it clear that depositing surface condition might be a universal parameter of SiC CVD, and the numerical simulation could predict the growth rate, surface morphology and doping concentration by taking account of the depositing surface condition. In this study, at first, the recent progress of SiC hot-wall epitaxy in experiment is summarized. Then, the present status of its numerical modeling is explained.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
ページ127-134
ページ数8
527-529
エディションPART 1
出版物ステータス出版済み - 2006
外部発表Yes
イベントInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, 米国
継続期間: 9 18 20059 23 2005

出版物シリーズ

名前Materials Science Forum
番号PART 1
527-529
ISSN(印刷物)0255-5476

その他

その他International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
米国
Pittsburgh, PA
期間9/18/059/23/05

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

これを引用

Nishizawa, S., & Pons, M. (2006). Recent progress of SiC hot-wall epitaxy and its modeling. : Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 版, 巻 527-529, pp. 127-134). (Materials Science Forum; 巻数 527-529, 番号 PART 1).