Recent progress of SiGe heterostructure technologies for novel devices

Masanobu Miyao, Hiroshi Kanno, Taizoh Sadoh

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results. Low temperature (<550°C) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300°C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices. Copyright The Electrochemical Society.

元の言語英語
ホスト出版物のタイトルDielectrics for Nanosystems II
ホスト出版物のサブタイトルMaterials Science, Processing, Reliability, and Manufacturing
ページ165-179
ページ数15
2
エディション1
出版物ステータス出版済み - 7 3 2006
イベント2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, 米国
継続期間: 5 7 20065 12 2006

その他

その他2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
米国
Denver, CO
期間5/7/065/12/06

Fingerprint

Magnetoelectronics
Thin film transistors
Epitaxial growth
Heterojunctions
Crystallization
Electric fields
Crystals
Substrates
Metals
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Miyao, M., Kanno, H., & Sadoh, T. (2006). Recent progress of SiGe heterostructure technologies for novel devices. : Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing (1 版, 巻 2, pp. 165-179)

Recent progress of SiGe heterostructure technologies for novel devices. / Miyao, Masanobu; Kanno, Hiroshi; Sadoh, Taizoh.

Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 巻 2 1. 編 2006. p. 165-179.

研究成果: 著書/レポートタイプへの貢献会議での発言

Miyao, M, Kanno, H & Sadoh, T 2006, Recent progress of SiGe heterostructure technologies for novel devices. : Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1 Edn, 巻. 2, pp. 165-179, 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society, Denver, CO, 米国, 5/7/06.
Miyao M, Kanno H, Sadoh T. Recent progress of SiGe heterostructure technologies for novel devices. : Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1 版 巻 2. 2006. p. 165-179
Miyao, Masanobu ; Kanno, Hiroshi ; Sadoh, Taizoh. / Recent progress of SiGe heterostructure technologies for novel devices. Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 巻 2 1. 版 2006. pp. 165-179
@inproceedings{afa96188487c4afd84c7b1df31dbf79d,
title = "Recent progress of SiGe heterostructure technologies for novel devices",
abstract = "The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results. Low temperature (<550°C) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300°C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices. Copyright The Electrochemical Society.",
author = "Masanobu Miyao and Hiroshi Kanno and Taizoh Sadoh",
year = "2006",
month = "7",
day = "3",
language = "English",
isbn = "1566774381",
volume = "2",
pages = "165--179",
booktitle = "Dielectrics for Nanosystems II",
edition = "1",

}

TY - GEN

T1 - Recent progress of SiGe heterostructure technologies for novel devices

AU - Miyao, Masanobu

AU - Kanno, Hiroshi

AU - Sadoh, Taizoh

PY - 2006/7/3

Y1 - 2006/7/3

N2 - The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results. Low temperature (<550°C) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300°C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices. Copyright The Electrochemical Society.

AB - The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results. Low temperature (<550°C) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300°C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices. Copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33745460935&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745460935&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33745460935

SN - 1566774381

SN - 9781566774383

VL - 2

SP - 165

EP - 179

BT - Dielectrics for Nanosystems II

ER -