抄録
We review recent progress on organic light emitting devices. First, we mention an organic light emitting transistor which has lateral organic light-emitting diode structure that allowed field-effect transistor (FET) operation. This device configuration provides a novel organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, we discuss on prospect on organic laser diodes. In particular, 4,4'-bis[(N-carbazole)styryl] biphenyl (BSB-Cz) demonstrated an extremely low ASE threshold of Eth=0.32±0.05μJ/cm 2, which is the lowest threshold ever reported. We observed that the 6-wt%-BSB-Cz:CBP film has an ultimate photoluminescence quantum efficiency of φpL=100% and a short transient lifetime of τf=1. 0±0.1ns, leading to a large radiative decay rate of kr= 1×109 s-1. We also discuss on possibility of the CW lasing.
| 元の言語 | 英語 |
|---|---|
| ページ | 4443-4445 |
| ページ数 | 3 |
| 出版物ステータス | 出版済み - 12 1 2005 |
| 外部発表 | Yes |
| イベント | 54th SPSJ Symposium on Macromolecules - Yamagata, 日本 継続期間: 9 20 2005 → 9 22 2005 |
その他
| その他 | 54th SPSJ Symposium on Macromolecules |
|---|---|
| 国 | 日本 |
| 市 | Yamagata |
| 期間 | 9/20/05 → 9/22/05 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
これを引用
Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser. / Adachi, Chihaya.
2005. 4443-4445 論文発表場所 54th SPSJ Symposium on Macromolecules, Yamagata, 日本.研究成果: 会議への寄与タイプ › 論文
}
TY - CONF
T1 - Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser
AU - Adachi, Chihaya
PY - 2005/12/1
Y1 - 2005/12/1
N2 - We review recent progress on organic light emitting devices. First, we mention an organic light emitting transistor which has lateral organic light-emitting diode structure that allowed field-effect transistor (FET) operation. This device configuration provides a novel organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, we discuss on prospect on organic laser diodes. In particular, 4,4'-bis[(N-carbazole)styryl] biphenyl (BSB-Cz) demonstrated an extremely low ASE threshold of Eth=0.32±0.05μJ/cm 2, which is the lowest threshold ever reported. We observed that the 6-wt%-BSB-Cz:CBP film has an ultimate photoluminescence quantum efficiency of φpL=100% and a short transient lifetime of τf=1. 0±0.1ns, leading to a large radiative decay rate of kr= 1×109 s-1. We also discuss on possibility of the CW lasing.
AB - We review recent progress on organic light emitting devices. First, we mention an organic light emitting transistor which has lateral organic light-emitting diode structure that allowed field-effect transistor (FET) operation. This device configuration provides a novel organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, we discuss on prospect on organic laser diodes. In particular, 4,4'-bis[(N-carbazole)styryl] biphenyl (BSB-Cz) demonstrated an extremely low ASE threshold of Eth=0.32±0.05μJ/cm 2, which is the lowest threshold ever reported. We observed that the 6-wt%-BSB-Cz:CBP film has an ultimate photoluminescence quantum efficiency of φpL=100% and a short transient lifetime of τf=1. 0±0.1ns, leading to a large radiative decay rate of kr= 1×109 s-1. We also discuss on possibility of the CW lasing.
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UR - http://www.scopus.com/inward/citedby.url?scp=33645575232&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:33645575232
SP - 4443
EP - 4445
ER -