Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser

研究成果: Contribution to conferencePaper査読

抄録

We review recent progress on organic light emitting devices. First, we mention an organic light emitting transistor which has lateral organic light-emitting diode structure that allowed field-effect transistor (FET) operation. This device configuration provides a novel organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, we discuss on prospect on organic laser diodes. In particular, 4,4'-bis[(N-carbazole)styryl] biphenyl (BSB-Cz) demonstrated an extremely low ASE threshold of Eth=0.32±0.05μJ/cm 2, which is the lowest threshold ever reported. We observed that the 6-wt%-BSB-Cz:CBP film has an ultimate photoluminescence quantum efficiency of φpL=100% and a short transient lifetime of τf=1. 0±0.1ns, leading to a large radiative decay rate of kr= 1×109 s-1. We also discuss on possibility of the CW lasing.

本文言語英語
ページ4443-4445
ページ数3
出版ステータス出版済み - 12 1 2005
外部発表はい
イベント54th SPSJ Symposium on Macromolecules - Yamagata, 日本
継続期間: 9 20 20059 22 2005

その他

その他54th SPSJ Symposium on Macromolecules
国/地域日本
CityYamagata
Period9/20/059/22/05

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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