Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser

研究成果: 会議への寄与タイプ論文

抄録

We review recent progress on organic light emitting devices. First, we mention an organic light emitting transistor which has lateral organic light-emitting diode structure that allowed field-effect transistor (FET) operation. This device configuration provides a novel organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, we discuss on prospect on organic laser diodes. In particular, 4,4'-bis[(N-carbazole)styryl] biphenyl (BSB-Cz) demonstrated an extremely low ASE threshold of Eth=0.32±0.05μJ/cm 2, which is the lowest threshold ever reported. We observed that the 6-wt%-BSB-Cz:CBP film has an ultimate photoluminescence quantum efficiency of φpL=100% and a short transient lifetime of τf=1. 0±0.1ns, leading to a large radiative decay rate of kr= 1×109 s-1. We also discuss on possibility of the CW lasing.

元の言語英語
ページ4443-4445
ページ数3
出版物ステータス出版済み - 12 1 2005
外部発表Yes
イベント54th SPSJ Symposium on Macromolecules - Yamagata, 日本
継続期間: 9 20 20059 22 2005

その他

その他54th SPSJ Symposium on Macromolecules
日本
Yamagata
期間9/20/059/22/05

Fingerprint

Semiconducting organic compounds
Organic light emitting diodes (OLED)
Semiconductor lasers
Transistors
Organic lasers
Field effect transistors
Quantum efficiency
Photoluminescence
Anodes
Cathodes
Electrodes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Adachi, C. (2005). Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser. 4443-4445. 論文発表場所 54th SPSJ Symposium on Macromolecules, Yamagata, 日本.

Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser. / Adachi, Chihaya.

2005. 4443-4445 論文発表場所 54th SPSJ Symposium on Macromolecules, Yamagata, 日本.

研究成果: 会議への寄与タイプ論文

Adachi, C 2005, 'Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser', 論文発表場所 54th SPSJ Symposium on Macromolecules, Yamagata, 日本, 9/20/05 - 9/22/05 pp. 4443-4445.
@conference{d8689c1715654c4e8fc69e463352f589,
title = "Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser",
abstract = "We review recent progress on organic light emitting devices. First, we mention an organic light emitting transistor which has lateral organic light-emitting diode structure that allowed field-effect transistor (FET) operation. This device configuration provides a novel organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, we discuss on prospect on organic laser diodes. In particular, 4,4'-bis[(N-carbazole)styryl] biphenyl (BSB-Cz) demonstrated an extremely low ASE threshold of Eth=0.32±0.05μJ/cm 2, which is the lowest threshold ever reported. We observed that the 6-wt{\%}-BSB-Cz:CBP film has an ultimate photoluminescence quantum efficiency of φpL=100{\%} and a short transient lifetime of τf=1. 0±0.1ns, leading to a large radiative decay rate of kr= 1×109 s-1. We also discuss on possibility of the CW lasing.",
author = "Chihaya Adachi",
year = "2005",
month = "12",
day = "1",
language = "English",
pages = "4443--4445",
note = "54th SPSJ Symposium on Macromolecules ; Conference date: 20-09-2005 Through 22-09-2005",

}

TY - CONF

T1 - Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser

AU - Adachi, Chihaya

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We review recent progress on organic light emitting devices. First, we mention an organic light emitting transistor which has lateral organic light-emitting diode structure that allowed field-effect transistor (FET) operation. This device configuration provides a novel organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, we discuss on prospect on organic laser diodes. In particular, 4,4'-bis[(N-carbazole)styryl] biphenyl (BSB-Cz) demonstrated an extremely low ASE threshold of Eth=0.32±0.05μJ/cm 2, which is the lowest threshold ever reported. We observed that the 6-wt%-BSB-Cz:CBP film has an ultimate photoluminescence quantum efficiency of φpL=100% and a short transient lifetime of τf=1. 0±0.1ns, leading to a large radiative decay rate of kr= 1×109 s-1. We also discuss on possibility of the CW lasing.

AB - We review recent progress on organic light emitting devices. First, we mention an organic light emitting transistor which has lateral organic light-emitting diode structure that allowed field-effect transistor (FET) operation. This device configuration provides a novel organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, we discuss on prospect on organic laser diodes. In particular, 4,4'-bis[(N-carbazole)styryl] biphenyl (BSB-Cz) demonstrated an extremely low ASE threshold of Eth=0.32±0.05μJ/cm 2, which is the lowest threshold ever reported. We observed that the 6-wt%-BSB-Cz:CBP film has an ultimate photoluminescence quantum efficiency of φpL=100% and a short transient lifetime of τf=1. 0±0.1ns, leading to a large radiative decay rate of kr= 1×109 s-1. We also discuss on possibility of the CW lasing.

UR - http://www.scopus.com/inward/record.url?scp=33645575232&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645575232&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:33645575232

SP - 4443

EP - 4445

ER -