Recombination dynamics in low-dimensional nitride semiconductors

Y. Kawakami, A. Kaneta, K. Omae, A. Shikanai, K. Okamoto, G. Marutsuki, Y. Narukawa, T. Mukai, Sg Fujita

研究成果: Contribution to journalArticle査読

19 被引用数 (Scopus)

抄録

Optical properties induced by two major effects, potential fluctuation and piezoelectric fields, have been assessed to interpret the emission mechanism in low-dimensional nitride semiconductors because the former leads to the exciton/carrier localization, and the latter to the quantum confined Stark effect (QCSE). Degenerated white-light pump-and-probe spectroscopy has been employed to assess which factor plays an important role in the series of In xGa1-xN multiple quantum well (MQW) structures whose well widths are 3 nm, 5 nm and 10 nm. Moreover, photoluminescence (PL) mapping with scanning near-field optical microscopy (SNOM) has revealed the dense distribution of island-like structures, the size of which ranges from 20 nm to 70 nm in a 3 nm-thick InxGa1-xN single quantum well (SQW) structure emitting at blue spectral region.

本文言語英語
ページ(範囲)337-343
ページ数7
ジャーナルPhysica Status Solidi (B) Basic Research
240
2
DOI
出版ステータス出版済み - 11 1 2003

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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