Recombination-enhanced migration of interstitial iron in silicon

H. Nakashima, T. Sadoh, T. Tsurushima

研究成果: Contribution to journalConference article査読

3 被引用数 (Scopus)

抄録

Recombination-enhanced migration of interstitial iron (Fei) in the vicinity of substitutional boron (Bs) has been investigated by using space charge technique combined with minority-carrier injection below 200 K. Four electron-traps and a hole-trap are observed as the structurally metastable Fei-Bs pairs after the injection. The creation and annihilation behaviors of these pairs by the injection are shown and discussed on the basis of the theory of the recombination-enhanced defect reaction.

本文言語英語
ページ(範囲)1351-1356
ページ数6
ジャーナルMaterials Science Forum
196-201
pt 3
DOI
出版ステータス出版済み - 1995
イベントProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
継続期間: 7 23 19957 28 1995

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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