Recombination mechanism in low-dimensional nitride semiconductors

Yoichi Kawakami, Akio Kaneta, Koichi Okamoto, Tsutomu Inoue, Fuminori Satou, Yoshihito Narita, Fritz Henneberger, Giichi Marutsuki, Yukio Narukawa, Takashi Mukai, Shigeo Fujita

研究成果: ジャーナルへの寄稿会議記事査読

抄録

Scanning near field optical microscopy (SNOM) has been developed to assess the recombination mechanism in low-dimensional nitride semiconductors by employing spatial and temporal photoluminescence (PL) mapping under illumination-collection at cryogenic temperatures. The near-field PL images taken at an InxGa1-xN single-quantum-well (SQW) structure revealed the variation of both intensity and peak energy according to the probing location with the scale less than a few tens of a nanometer. The PL, the linewidth of which was about 60meV in macroscopic measurements, was separated into several peaks with the linewidth of about 12 meV if the SNOM-PL was taken with the aperture size of 30 nm. Clear spatial correlation was observed between PL intensity and PL peak-photon-energy, where the regions of strong PL intensity correspond to those of low PL peak-photon-energy. Time-resolved SNOM-PL study showed the important role of exciton/carrier localization in the recombination mechanism in InxGa 1-xN-based quantum structures.

本文言語英語
ページ(範囲)575-588
ページ数14
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
4986
DOI
出版ステータス出版済み - 11月 27 2003
イベントPROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI - San Jose, CA, 米国
継続期間: 1月 27 20031月 31 2003

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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