Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

Masaki Goto, Ryo Amano, Naotaka Shimoda, Yoshimine Kato, Kungen Tsutsui

研究成果: ジャーナルへの寄稿記事

11 引用 (Scopus)

抄録

Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 107 at room temperature and 104 even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

元の言語英語
記事番号153113
ジャーナルApplied Physics Letters
104
発行部数15
DOI
出版物ステータス出版済み - 1 1 2014

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rectification
silicon carbides
heterojunctions
diamonds
injection
junction diodes
Schottky diodes
diamond films
p-n junctions
conduction bands
leakage
energy levels
shift
defects
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures. / Goto, Masaki; Amano, Ryo; Shimoda, Naotaka; Kato, Yoshimine; Tsutsui, Kungen.

:: Applied Physics Letters, 巻 104, 番号 15, 153113, 01.01.2014.

研究成果: ジャーナルへの寄稿記事

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AU - Tsutsui, Kungen

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