Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace

B. Gao, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto

研究成果: Contribution to journalArticle査読

46 被引用数 (Scopus)

抄録

The generation of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace was analyzed numerically. The crystal-melt interface is tracked by an enthalpy method. Numerical results show that some polycrystalline silicon grains generates along the crucible wall and marches into the interior of crystal. The ratio of polycrystalline silicon grains in a global crystal is mainly determined by a ratio of thermal flux along the crucible wall to thermal flux along the seed. By reducing the thermal flux along the crucible wall or by increasing the thermal flux along the seed, the ratio of polycrystalline silicon grains in a global crystal can be markedly reduced.

本文言語英語
ページ(範囲)47-52
ページ数6
ジャーナルJournal of Crystal Growth
352
1
DOI
出版ステータス出版済み - 8 1 2012
外部発表はい

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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