Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC

Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi

研究成果: Contribution to journalArticle査読

34 被引用数 (Scopus)

抄録

A low dislocation density of ∼ 107-8 cm-2 in GaN thin films on 6H-SiC(0001) substrates grown by metalorganic chemical vapor deposition was achieved. By considering possible origins of dislocations in the GaN/AlN/SiC structure, two major dislocation reduction routes are proposed; ultra-thin AlN buffer layers and smooth AlN surfaces in an atomic scale. Experimentally, the effects of the surface roughness and structural perfection of the AlN buffer layer on GaN film quality were extensively investigated as a function of AlN film thickness. The reduced dislocation density was realized by using ultra-thin AlN buffer layers having a thickness of ∼ 1.5 nm, which is below the critical value for misfit dislocation generation. The smoother surface morphology and enhanced structural quality of ultra-thin AlN buffer layers were found to be the main parameters in reducing the defect density in the GaN film.

本文言語英語
ページ(範囲)329-334
ページ数6
ジャーナルJournal of Crystal Growth
170
1-4
DOI
出版ステータス出版済み - 1 1997
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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