Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs

Toshiyuki Naka, Wataru Saito

研究成果: Contribution to journalConference article

1 引用 (Scopus)

抜粋

This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate leakage current. The relation between the UIS withstanding capability and the gate leakage current is discussed by the results of the UIS test for GaN-HEMTs with a p-type gate structure. Conclusively, the relation between the UIS withstanding capability and the crystal defect density around the gate for the GaN-HEMT was clarified.

元の言語英語
記事番号7988922
ページ(範囲)199-202
ページ数4
ジャーナルProceedings of the International Symposium on Power Semiconductor Devices and ICs
DOI
出版物ステータス出版済み - 1 1 2017
外部発表Yes
イベント29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017 - Sapporo, 日本
継続期間: 5 28 20176 1 2017

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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