This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate leakage current. The relation between the UIS withstanding capability and the gate leakage current is discussed by the results of the UIS test for GaN-HEMTs with a p-type gate structure. Conclusively, the relation between the UIS withstanding capability and the crystal defect density around the gate for the GaN-HEMT was clarified.
|ジャーナル||Proceedings of the International Symposium on Power Semiconductor Devices and ICs|
|出版物ステータス||出版済み - 1 1 2017|
|イベント||29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017 - Sapporo, 日本|
継続期間: 5 28 2017 → 6 1 2017
All Science Journal Classification (ASJC) codes