Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

Y. Miyamura, H. Harada, S. Nakano, S. Nishizawa, Koichi Kakimoto

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6–8 × 1017 atoms/cm3, and the bulk lifetimes ranged from 10 to 20 ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration.

本文言語英語
ページ(範囲)56-59
ページ数4
ジャーナルJournal of Crystal Growth
486
DOI
出版ステータス出版済み - 3 15 2018

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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