TY - GEN
T1 - Relationship between electric properties and surface flatness of (ZnO)x(InN)1-x films on ZnO templates
AU - Matsushima, Koichi
AU - Shiratani, Masaharu
AU - Itagaki, Naho
N1 - Funding Information:
This work was partially supported by Japan Society for the Promotion of Science (JSPS) Grant-in-Aid for Scientific Research grant number 15H05431 and Grant-in-Aid for JSPS Fellows 26005011.
Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - We have studied effects of deposition temperature on electrical properties of (ZnO)x(InN)1-x (ZION) films on ZnO templates. With increasing the deposition temperature from RT to 450°C, the electron mobility decreases from 93 cm2/Vs to 70 cm2/Vs and the carrier density increases from 1.8×1019 cm-3 to 3.4×1019 cm-3. Furthermore, we found a correlation between electrical properties and root mean square (RMS) roughness of the films. These results suggest the surface flatness is an important parameter to determine electrical properties of ZION films.
AB - We have studied effects of deposition temperature on electrical properties of (ZnO)x(InN)1-x (ZION) films on ZnO templates. With increasing the deposition temperature from RT to 450°C, the electron mobility decreases from 93 cm2/Vs to 70 cm2/Vs and the carrier density increases from 1.8×1019 cm-3 to 3.4×1019 cm-3. Furthermore, we found a correlation between electrical properties and root mean square (RMS) roughness of the films. These results suggest the surface flatness is an important parameter to determine electrical properties of ZION films.
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U2 - 10.1109/NANO.2016.7751421
DO - 10.1109/NANO.2016.7751421
M3 - Conference contribution
AN - SCOPUS:85006927613
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 674
EP - 675
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -