抄録
We have studied effects of deposition temperature on electrical properties of (ZnO)x(InN)1-x (ZION) films on ZnO templates. With increasing the deposition temperature from RT to 450°C, the electron mobility decreases from 93 cm2/Vs to 70 cm2/Vs and the carrier density increases from 1.8×1019 cm-3 to 3.4×1019 cm-3. Furthermore, we found a correlation between electrical properties and root mean square (RMS) roughness of the films. These results suggest the surface flatness is an important parameter to determine electrical properties of ZION films.
| 元の言語 | 英語 |
|---|---|
| ホスト出版物のタイトル | 16th International Conference on Nanotechnology - IEEE NANO 2016 |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| ページ | 674-675 |
| ページ数 | 2 |
| ISBN（電子版） | 9781509039142 |
| DOI | |
| 出版物ステータス | 出版済み - 11 21 2016 |
| イベント | 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, 日本 継続期間: 8 22 2016 → 8 25 2016 |
出版物シリーズ
| 名前 | 16th International Conference on Nanotechnology - IEEE NANO 2016 |
|---|
その他
| その他 | 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 |
|---|---|
| 国 | 日本 |
| 市 | Sendai |
| 期間 | 8/22/16 → 8/25/16 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
これを引用
Relationship between electric properties and surface flatness of (ZnO)x(InN)1-x films on ZnO templates. / Matsushima, Koichi; Shiratani, Masaharu; Itagaki, Naho.
16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 674-675 7751421 (16th International Conference on Nanotechnology - IEEE NANO 2016).研究成果: 著書/レポートタイプへの貢献 › 会議での発言
}
TY - GEN
T1 - Relationship between electric properties and surface flatness of (ZnO)x(InN)1-x films on ZnO templates
AU - Matsushima, Koichi
AU - Shiratani, Masaharu
AU - Itagaki, Naho
PY - 2016/11/21
Y1 - 2016/11/21
N2 - We have studied effects of deposition temperature on electrical properties of (ZnO)x(InN)1-x (ZION) films on ZnO templates. With increasing the deposition temperature from RT to 450°C, the electron mobility decreases from 93 cm2/Vs to 70 cm2/Vs and the carrier density increases from 1.8×1019 cm-3 to 3.4×1019 cm-3. Furthermore, we found a correlation between electrical properties and root mean square (RMS) roughness of the films. These results suggest the surface flatness is an important parameter to determine electrical properties of ZION films.
AB - We have studied effects of deposition temperature on electrical properties of (ZnO)x(InN)1-x (ZION) films on ZnO templates. With increasing the deposition temperature from RT to 450°C, the electron mobility decreases from 93 cm2/Vs to 70 cm2/Vs and the carrier density increases from 1.8×1019 cm-3 to 3.4×1019 cm-3. Furthermore, we found a correlation between electrical properties and root mean square (RMS) roughness of the films. These results suggest the surface flatness is an important parameter to determine electrical properties of ZION films.
UR - http://www.scopus.com/inward/record.url?scp=85006927613&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006927613&partnerID=8YFLogxK
U2 - 10.1109/NANO.2016.7751421
DO - 10.1109/NANO.2016.7751421
M3 - Conference contribution
AN - SCOPUS:85006927613
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 674
EP - 675
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -