Reliability and degradation behavior of a InGaAsP/InP waveguide photodiode for subscriber systems

Hiroyasu Mawatari; Mitsuo Fukuda; Kazutoshi Kato; Atsuo Kozen; Masahiro Yuda; Tatsuya Takeshita; Naoto Uchida; Hiromu Toba

Reliability and degradation behavior of a InGaAsP/InP waveguide photodiode for subscriber systems

Hiroyasu Mawatari, Mitsuo Fukuda, Kazutoshi Kato, Atsuo Kozen, Masahiro Yuda, Tatsuya Takeshita, Naoto Uchida, Hiromu Toba

研究成果: Contribution to conference › Paper › 査読

2 被引用数 (Scopus)

抄録

A selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) has a long lifetime for subscriber system use and the device life is determined by the perimeter of the pn-junction. The thickness of the absorption layer is 3 μm. The pn-junction is formed at the absorption layer by means of Zn diffusion from the surface. The facet at which the input light received is formed by cleavage and coated with SiN, filmed formed by plasma enhanced chemical vapor deposition. The responsivity is about 0.8 A/W at bias of -2 V. On these SIMPLE-WGPDs, several kinds of reliability tests were performed.

本文言語	英語
ページ数	1
出版ステータス	出版済み - 1 1 1997
外部発表	はい
イベント	Proceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim - Chiba, Jpn 継続期間: 7 14 1997 → 7 18 1997

その他

その他	Proceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim
City	Chiba, Jpn
Period	7/14/97 → 7/18/97

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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引用スタイル

Reliability and degradation behavior of a InGaAsP/InP waveguide photodiode for subscriber systems. / Mawatari, Hiroyasu; Fukuda, Mitsuo; Kato, Kazutoshi; Kozen, Atsuo; Yuda, Masahiro; Takeshita, Tatsuya; Uchida, Naoto; Toba, Hiromu.

1997. Paper presented at Proceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim, Chiba, Jpn, .

研究成果: Contribution to conference › Paper › 査読

Mawatari, Hiroyasu ; Fukuda, Mitsuo ; Kato, Kazutoshi ; Kozen, Atsuo ; Yuda, Masahiro ; Takeshita, Tatsuya ; Uchida, Naoto ; Toba, Hiromu. / Reliability and degradation behavior of a InGaAsP/InP waveguide photodiode for subscriber systems. Paper presented at Proceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim, Chiba, Jpn, .1 p.

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abstract = "A selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) has a long lifetime for subscriber system use and the device life is determined by the perimeter of the pn-junction. The thickness of the absorption layer is 3 μm. The pn-junction is formed at the absorption layer by means of Zn diffusion from the surface. The facet at which the input light received is formed by cleavage and coated with SiN, filmed formed by plasma enhanced chemical vapor deposition. The responsivity is about 0.8 A/W at bias of -2 V. On these SIMPLE-WGPDs, several kinds of reliability tests were performed.",

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AU - Mawatari, Hiroyasu

AU - Fukuda, Mitsuo

AU - Kato, Kazutoshi

AU - Kozen, Atsuo

AU - Yuda, Masahiro

AU - Takeshita, Tatsuya

AU - Uchida, Naoto

AU - Toba, Hiromu

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AB - A selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) has a long lifetime for subscriber system use and the device life is determined by the perimeter of the pn-junction. The thickness of the absorption layer is 3 μm. The pn-junction is formed at the absorption layer by means of Zn diffusion from the surface. The facet at which the input light received is formed by cleavage and coated with SiN, filmed formed by plasma enhanced chemical vapor deposition. The responsivity is about 0.8 A/W at bias of -2 V. On these SIMPLE-WGPDs, several kinds of reliability tests were performed.

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