Reliability and degradation behavior of a InGaAsP/InP waveguide photodiode for subscriber systems

Hiroyasu Mawatari, Mitsuo Fukuda, Kazutoshi Kato, Atsuo Kozen, Masahiro Yuda, Tatsuya Takeshita, Naoto Uchida, Hiromu Toba

研究成果: 会議への寄与タイプ学会誌査読

2 被引用数 (Scopus)

抄録

A selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) has a long lifetime for subscriber system use and the device life is determined by the perimeter of the pn-junction. The thickness of the absorption layer is 3 μm. The pn-junction is formed at the absorption layer by means of Zn diffusion from the surface. The facet at which the input light received is formed by cleavage and coated with SiN, filmed formed by plasma enhanced chemical vapor deposition. The responsivity is about 0.8 A/W at bias of -2 V. On these SIMPLE-WGPDs, several kinds of reliability tests were performed.

本文言語英語
ページ数1
出版ステータス出版済み - 1月 1 1997
外部発表はい
イベントProceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim - Chiba, Jpn
継続期間: 7月 14 19977月 18 1997

その他

その他Proceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim
CityChiba, Jpn
Period7/14/977/18/97

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

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