Reliability of GaN-HEMTs for high-voltage switching applications

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

13 被引用数 (Scopus)

抄録

This paper reports that the maximum electric field is a dominant factor for reliability in high-voltage GaN-HEMTs. Four types of the GaN-HEMT with different field plate (FP) structures were tested in continuous switching operation mode to analyze the degradation mechanism and the optimal device design. From the on-resistance degradation dependence on the FP structure, we extract that the gate-edge electric field strongly affects the increase of the dynamic on-resistance. Although the FP-edge field also increased the dynamic on-resistance, its influence was weaker than that of the gate-edge field. The optimal FP structure minimizes the increase of the dynamic on-resistance by reducing the electric field peaks and showed no degradation of power efficiency at the boost converter operation.

本文言語英語
ホスト出版物のタイトル2011 International Reliability Physics Symposium, IRPS 2011
ページ4E.1.1-4E.1.5
DOI
出版ステータス出版済み - 6 23 2011
外部発表はい
イベント49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, 米国
継続期間: 4 10 20114 14 2011

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
ISSN(印刷版)1541-7026

会議

会議49th International Reliability Physics Symposium, IRPS 2011
Country米国
CityMonterey, CA
Period4/10/114/14/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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