Reply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms’ ”

Teruaki Motooka, Ken Nishihira, Shinji Munetoh, Koji Moriguchi, Akira Shintani

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

We have investigated atomic diffusion properties near the amorphous/crystalline (formula presented) Si(001) interface during solid-phase epitaxy (SPE) of Si based on molecular-dynamics simulations using the Tersoff potential. It has been found that the mean-square displacement of the Si atoms in an amorphous layer with a thickness of 10 Å at the (formula presented) interface is larger than that in bulk amorphous Si. This can be attributed to local heating due to crystallization of amorphous Si during SPE growth.

本文言語英語
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
63
23
DOI
出版ステータス出版済み - 1 1 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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