Reply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms’ ”

Teruaki Motooka, Ken Nishihira, Shinji Munetoh, Koji Moriguchi, Akira Shintani

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

We have investigated atomic diffusion properties near the amorphous/crystalline (formula presented) Si(001) interface during solid-phase epitaxy (SPE) of Si based on molecular-dynamics simulations using the Tersoff potential. It has been found that the mean-square displacement of the Si atoms in an amorphous layer with a thickness of 10 Å at the (formula presented) interface is larger than that in bulk amorphous Si. This can be attributed to local heating due to crystallization of amorphous Si during SPE growth.

元の言語英語
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
63
発行部数23
DOI
出版物ステータス出版済み - 1 1 2001

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Epitaxial growth
epitaxy
Molecular dynamics
solid phases
molecular dynamics
Computer simulation
simulation
crystallization
heating
Crystallization
atoms
Crystalline materials
Heating
Atoms

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Reply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si : Growth mechanisms’ ”. / Motooka, Teruaki; Nishihira, Ken; Munetoh, Shinji; Moriguchi, Koji; Shintani, Akira.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 63, 番号 23, 01.01.2001.

研究成果: ジャーナルへの寄稿記事

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AU - Nishihira, Ken

AU - Munetoh, Shinji

AU - Moriguchi, Koji

AU - Shintani, Akira

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