Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures

研究成果: ジャーナルへの寄稿記事

64 引用 (Scopus)

抄録

Leakage currents in epitaxial ferroelectric/perovskite-conductor heterostructures reproducibly show diode properties having hysteresis. The hysteresis appears in forward bias, which is positive for electron (n) type conductors and negative for hole (p) type conductors. The hysteresis is due to the increase of conductivity by the forward bias current, which exhibits the memory retention for more than an hour. The write and erase speeds of the diode and the origin of the effect are discussed.

元の言語英語
ページ(範囲)28
ページ数1
ジャーナルApplied Physics Letters
出版物ステータス出版済み - 1995
外部発表Yes

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leakage
conductors
hysteresis
diodes
conductivity
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

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abstract = "Leakage currents in epitaxial ferroelectric/perovskite-conductor heterostructures reproducibly show diode properties having hysteresis. The hysteresis appears in forward bias, which is positive for electron (n) type conductors and negative for hole (p) type conductors. The hysteresis is due to the increase of conductivity by the forward bias current, which exhibits the memory retention for more than an hour. The write and erase speeds of the diode and the origin of the effect are discussed.",
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AB - Leakage currents in epitaxial ferroelectric/perovskite-conductor heterostructures reproducibly show diode properties having hysteresis. The hysteresis appears in forward bias, which is positive for electron (n) type conductors and negative for hole (p) type conductors. The hysteresis is due to the increase of conductivity by the forward bias current, which exhibits the memory retention for more than an hour. The write and erase speeds of the diode and the origin of the effect are discussed.

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