Reversible electromigration of thallium adatoms on the Si(1 1 1) surface

Anton Visikovskiy, Seigi Mizuno, Hiroshi Tochihara

研究成果: Contribution to journalArticle査読

10 被引用数 (Scopus)

抄録

By means of low-energy electron diffraction (LEED), we found a reversible structural change of (1 × 1) ↔ (sqrt(3) × sqrt(3)) on thallium (Tl) adsorbed Si(1 1 1) surfaces by switching the polarity of applied DC voltage for heating the sample. It was shown in the literature that Tl adatoms are located on the T4 sites of the bulk-terminated surface both in the (1 × 1) and (sqrt(3) × sqrt(3)). It is clarified that the structural change is caused by the electromigration of the Tl adatoms. Tl atoms migrate towards the cathode, being induced by the electric field (10-20 V/cm). We discussed an atomic process of the electromigration.

本文言語英語
ページ(範囲)189-193
ページ数5
ジャーナルSurface Science
600
15
DOI
出版ステータス出版済み - 8 1 2006

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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