Reversible phase transitions in the pseudomorphic 7×3 -hex in layer on Si(111)

A. A. Saranin, A. V. Zotov, M. Kishida, Y. Murata, S. Honda, M. Katayama, K. Oura, D. V. Gruznev, A. Visikovskiy, H. Tochihara

研究成果: Contribution to journalArticle査読

23 被引用数 (Scopus)

抄録

Using scanning tunneling microscopy, reversible phase transitions have been detected in the modulated pseudomorphic In monolayer on the Si(111) surface. It has been found that the room-temperature quasihexagonal 7×3 structure is transformed into the 7×7 structure during cooling in the temperature range from 265 to 225 K. Further cooling results in developing long-range modulations in the In layer, including formation of the chevron-type structure with 67×7 periodicity, the ordered arrays with regular antiphase domain boundaries with local 37 ×7, and 27×7 periodicity and the chained-ring structure with 10 3 3× 40 3 3 periodicity, which is believed to originate from the 5 3 3× 5 3 3 structure occurring at room temperature near surface defects and at domain boundaries of the original 7×3-In phase.

本文言語英語
論文番号035436
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
74
3
DOI
出版ステータス出版済み - 2006

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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