Using scanning tunneling microscopy, reversible phase transitions have been detected in the modulated pseudomorphic In monolayer on the Si(111) surface. It has been found that the room-temperature quasihexagonal 7×3 structure is transformed into the 7×7 structure during cooling in the temperature range from 265 to 225 K. Further cooling results in developing long-range modulations in the In layer, including formation of the chevron-type structure with 67×7 periodicity, the ordered arrays with regular antiphase domain boundaries with local 37 ×7, and 27×7 periodicity and the chained-ring structure with 10 3 3× 40 3 3 periodicity, which is believed to originate from the 5 3 3× 5 3 3 structure occurring at room temperature near surface defects and at domain boundaries of the original 7×3-In phase.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||出版済み - 2006|
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