Rigidity enhancement of GeO2 by y doping for reliable Ge gate stacks

Tomonori Nishimura, Xiaoyu Tang, Takeaki Yajima, Akira Toriumi

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

The poor reliability of GeO2/Ge stack is improved by appropriate cation (e.g. Sc or Y) doping into GeO2 and it is considered to be thanks to the enhancement of GeO2 network rigidity. We discuss the impact of cation doping on structural modulation of GeO2 on Ge substrate in the thermal treatment. By doping a small amount of Y into GeO2, the crystallization of GeO2 from amorphous to α-quartz structure is efficiently suppressed. It is a direct evidence of modulation of GeO2 network rigidity by the cation doping.

本文言語英語
ホスト出版物のタイトル2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ196-198
ページ数3
ISBN(印刷版)9781538637111
DOI
出版ステータス出版済み - 7 26 2018
外部発表はい
イベント2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, 日本
継続期間: 3 13 20183 16 2018

出版物シリーズ

名前2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

その他

その他2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
国/地域日本
CityKobe
Period3/13/183/16/18

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料

フィンガープリント

「Rigidity enhancement of GeO<sub>2</sub> by y doping for reliable Ge gate stacks」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル