Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge

Keisuke Yamamoto, Masatoshi Mitsuhara, Keisuke Hiidome, Ryutaro Noguchi, Minoru Nishida, Dong Wang, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿学術誌査読

26 被引用数 (Scopus)

抄録

TiN/Ge contacts, prepared by direct sputter deposition from a TiN target, can alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. This work focuses on studying the origin of the FLP alleviation. Investigations on both the electrical properties and interfacial structures of TiN/Ge contacts showed that an amorphous interlayer (IL) containing nitrogen played an important role in the alleviation. For comparison, the properties of Ti/Ge contacts were also studied. Based on these results, the IL structure that induced the FLP alleviation was clearly shown and a model was proposed to explain the FLP alleviation.

本文言語英語
論文番号132109
ジャーナルApplied Physics Letters
104
13
DOI
出版ステータス出版済み - 3月 31 2014

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

フィンガープリント

「Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル