Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge

研究成果: ジャーナルへの寄稿記事

23 引用 (Scopus)

抄録

TiN/Ge contacts, prepared by direct sputter deposition from a TiN target, can alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. This work focuses on studying the origin of the FLP alleviation. Investigations on both the electrical properties and interfacial structures of TiN/Ge contacts showed that an amorphous interlayer (IL) containing nitrogen played an important role in the alleviation. For comparison, the properties of Ti/Ge contacts were also studied. Based on these results, the IL structure that induced the FLP alleviation was clearly shown and a model was proposed to explain the FLP alleviation.

元の言語英語
記事番号132109
ジャーナルApplied Physics Letters
104
発行部数13
DOI
出版物ステータス出版済み - 3 31 2014

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interlayers
conduction bands
electrical properties
nitrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

@article{956900ff80124e1da53535e9af22f3f5,
title = "Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge",
abstract = "TiN/Ge contacts, prepared by direct sputter deposition from a TiN target, can alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. This work focuses on studying the origin of the FLP alleviation. Investigations on both the electrical properties and interfacial structures of TiN/Ge contacts showed that an amorphous interlayer (IL) containing nitrogen played an important role in the alleviation. For comparison, the properties of Ti/Ge contacts were also studied. Based on these results, the IL structure that induced the FLP alleviation was clearly shown and a model was proposed to explain the FLP alleviation.",
author = "Keisuke Yamamoto and Masatoshi Mitsuhara and Keisuke Hiidome and Ryutaro Noguchi and Minoru Nishida and Dong Wang and Hiroshi Nakashima",
year = "2014",
month = "3",
day = "31",
doi = "10.1063/1.4870510",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge

AU - Yamamoto, Keisuke

AU - Mitsuhara, Masatoshi

AU - Hiidome, Keisuke

AU - Noguchi, Ryutaro

AU - Nishida, Minoru

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2014/3/31

Y1 - 2014/3/31

N2 - TiN/Ge contacts, prepared by direct sputter deposition from a TiN target, can alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. This work focuses on studying the origin of the FLP alleviation. Investigations on both the electrical properties and interfacial structures of TiN/Ge contacts showed that an amorphous interlayer (IL) containing nitrogen played an important role in the alleviation. For comparison, the properties of Ti/Ge contacts were also studied. Based on these results, the IL structure that induced the FLP alleviation was clearly shown and a model was proposed to explain the FLP alleviation.

AB - TiN/Ge contacts, prepared by direct sputter deposition from a TiN target, can alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. This work focuses on studying the origin of the FLP alleviation. Investigations on both the electrical properties and interfacial structures of TiN/Ge contacts showed that an amorphous interlayer (IL) containing nitrogen played an important role in the alleviation. For comparison, the properties of Ti/Ge contacts were also studied. Based on these results, the IL structure that induced the FLP alleviation was clearly shown and a model was proposed to explain the FLP alleviation.

UR - http://www.scopus.com/inward/record.url?scp=84898078104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898078104&partnerID=8YFLogxK

U2 - 10.1063/1.4870510

DO - 10.1063/1.4870510

M3 - Article

AN - SCOPUS:84898078104

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 132109

ER -