Role of hydrogen and oxygen gas in the growth of carbon thin films by pulsed laser deposition

Tsuyoshi Yoshitake, Takashi Nishiyama, Kunihito Nagayama

研究成果: ジャーナルへの寄稿会議記事査読

52 被引用数 (Scopus)

抄録

Carbon thin films of thickness 100 nm were deposited at a substrate temperature of 20 °C by pulsed laser deposition using a graphite target. The laser source used was an ArF excimer laser. The ambient pressure was varied between 10-7 and 1 Torr by adjusting the gas flow of hydrogen or oxygen. Raman spectrum measurement showed a broad peak with a center at 1550 cm-1 for all films deposited in both ambient gases, similar to those of typical diamond-like carbon films prepared using other methods. The absorption coefficients decreased and the optical band gaps increased at pressures higher than 10 mTorr for hydrogen and 0.1 mTorr for oxygen. These results indicate that both hydrogen and oxygen are effective in etching an sp2 bonding fraction. The sp2 etching processes for ambient hydrogen and oxygen could be explained well by the combination of the expected ablation processes and the reaction rate between carbon atoms and the ambient gases.

本文言語英語
ページ(範囲)689-692
ページ数4
ジャーナルDiamond and Related Materials
9
3
DOI
出版ステータス出版済み - 2000
イベント10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague, Czech Republic
継続期間: 9月 12 19999月 17 1999

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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