Role of surrounding oxygen on oxide nanowire growth

Annop Klamchuen; Takeshi Yanagida; Masaki Kanai; Kazuki Nagashima; Keisuke Oka; Tomoji Kawai; Masaru Suzuki; Yoshiki Hidaka; Shoichi Kai

doi:10.1063/1.3474605

Role of surrounding oxygen on oxide nanowire growth

Annop Klamchuen, Takeshi Yanagida, Masaki Kanai, Kazuki Nagashima, Keisuke Oka, Tomoji Kawai, Masaru Suzuki, Yoshiki Hidaka, Shoichi Kai

研究成果: Contribution to journal › Article › 査読

34 被引用数 (Scopus)

抄録

The ability to control oxide nanowires via vapor-liquid-solid (VLS) mechanism remains an important challenge to explore various applications of oxide nanowires. Here we demonstrate the crucial roles of surrounding oxygen on VLS grown SnO₂ nanowires. When the partial pressure of surrounding oxygen is relatively low, the oxygen mainly acts as an oxygen source, promoting VLS growth. While for relatively high oxygen partial pressures, vapor-solid (VS) growth emerges, suppressing nanowire growth. The findings as to the roles of surrounding oxygen on the inherent competition between VLS and VS growths are in principle rather universal for VLS grown nanowires of various oxides.

本文言語	英語
論文番号	073114
ジャーナル	Applied Physics Letters
巻	97
号	7
DOI	https://doi.org/10.1063/1.3474605
出版ステータス	出版済み - 8 16 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.3474605

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引用スタイル

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title = "Role of surrounding oxygen on oxide nanowire growth",

abstract = "The ability to control oxide nanowires via vapor-liquid-solid (VLS) mechanism remains an important challenge to explore various applications of oxide nanowires. Here we demonstrate the crucial roles of surrounding oxygen on VLS grown SnO2 nanowires. When the partial pressure of surrounding oxygen is relatively low, the oxygen mainly acts as an oxygen source, promoting VLS growth. While for relatively high oxygen partial pressures, vapor-solid (VS) growth emerges, suppressing nanowire growth. The findings as to the roles of surrounding oxygen on the inherent competition between VLS and VS growths are in principle rather universal for VLS grown nanowires of various oxides.",

author = "Annop Klamchuen and Takeshi Yanagida and Masaki Kanai and Kazuki Nagashima and Keisuke Oka and Tomoji Kawai and Masaru Suzuki and Yoshiki Hidaka and Shoichi Kai",

note = "Funding Information: This study was in part supported by a Grant-in-Aid for Scientific Research on Innovative Areas (Grant No. 20111004) from the Ministry of Education, Culture Sports, Science and Technology (MEXT) of Japan. T.K. was supported by FIRST program. ",

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doi = "10.1063/1.3474605",

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T1 - Role of surrounding oxygen on oxide nanowire growth

AU - Klamchuen, Annop

AU - Yanagida, Takeshi

AU - Kanai, Masaki

AU - Nagashima, Kazuki

AU - Oka, Keisuke

AU - Kawai, Tomoji

AU - Suzuki, Masaru

AU - Hidaka, Yoshiki

AU - Kai, Shoichi

N1 - Funding Information: This study was in part supported by a Grant-in-Aid for Scientific Research on Innovative Areas (Grant No. 20111004) from the Ministry of Education, Culture Sports, Science and Technology (MEXT) of Japan. T.K. was supported by FIRST program.

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Y1 - 2010/8/16

N2 - The ability to control oxide nanowires via vapor-liquid-solid (VLS) mechanism remains an important challenge to explore various applications of oxide nanowires. Here we demonstrate the crucial roles of surrounding oxygen on VLS grown SnO2 nanowires. When the partial pressure of surrounding oxygen is relatively low, the oxygen mainly acts as an oxygen source, promoting VLS growth. While for relatively high oxygen partial pressures, vapor-solid (VS) growth emerges, suppressing nanowire growth. The findings as to the roles of surrounding oxygen on the inherent competition between VLS and VS growths are in principle rather universal for VLS grown nanowires of various oxides.

AB - The ability to control oxide nanowires via vapor-liquid-solid (VLS) mechanism remains an important challenge to explore various applications of oxide nanowires. Here we demonstrate the crucial roles of surrounding oxygen on VLS grown SnO2 nanowires. When the partial pressure of surrounding oxygen is relatively low, the oxygen mainly acts as an oxygen source, promoting VLS growth. While for relatively high oxygen partial pressures, vapor-solid (VS) growth emerges, suppressing nanowire growth. The findings as to the roles of surrounding oxygen on the inherent competition between VLS and VS growths are in principle rather universal for VLS grown nanowires of various oxides.

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