Role of the surface N-H molecular layer in high quality In-RICH InGaN growth by MOVPE

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto

研究成果: Contribution to journalConference article査読

抄録

This study theoretically investigates the influence of the growth orientation on In incorporation during metal-organic vapor phase epitaxy (MOVPE) growth. We propose a new theoretical model based on first-principles calculations that show the role of the N-H molecular layer on In incorporation. Under MOVPE growth conditions, III-nitride surfaces terminated by N-H molecular layers are stable. The N-H layer that covers the In atomic layer prevents In atom desorption and is replaced by Ga atoms. In incorporation is, therefore, more efficient for higher N-H layer coverage and stability. To investigate this relationship, calculation of the enthalpy change for the decomposition of an N-H molecular layer was performed. To take into account the experimental conditions, temperature dependence of surface reconstruction is considered. The trend of this enthalpy change depends on the growth orientation, which agrees well with the experimental In composition.

本文言語英語
ページ(範囲)615-619
ページ数5
ジャーナルJOURNAL OF CHEMICAL ENGINEERING OF JAPAN
47
7 SPECIAL ISSUE
DOI
出版ステータス出版済み - 2014
イベントInternational Symposium on Innovative Materials for Processes in Energy Systems, IMPRES 2013 - Fukuoka, 日本
継続期間: 9 4 20139 6 2013

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 化学工学(全般)

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