抄録
The theoretical approach established on the response of semiconductor gas sensors to oxygen was extended to the response to N O2 (oxidizing gas) or H2 and CO (reducing gases) in air. The former extension was carried out simply by replacing the reduced adsorptive strength of oxygen by that of N O2. The resulting equations were found to well explain the N O2 sensing behavior of the devices using granular or lamellar crystals of W O3. The latter extension was carried out through a steady-state method; that is, the steady concentration of adsorbed oxygen (O-) was combined with the electronic equilibrium of the constituent crystals underneath to formulate the sensor response as a function of the partial pressure of each reducing gas. It was confirmed that the theory could account for the grain size effects and doping effect reported for Sn O2 -based devices fairly well.
本文言語 | 英語 |
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ジャーナル | Journal of the Electrochemical Society |
巻 | 155 |
号 | 4 |
DOI | |
出版ステータス | 出版済み - 3 14 2008 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry