Room temperature deposition of silicon oxynitride films with low stress using sputtering-type electron cyclotron resonance plasmas

D. Gao, K. Furukawa, H. Nakashima, J. Gao, J. Wang, K. Muraoka

    研究成果: ジャーナルへの寄稿会議記事査読

    1 被引用数 (Scopus)

    抄録

    Silicon oxynitride (SiOxNy) films with low stress were deposited successfully at room temperature using sputtering-type electron cyclotron resonance (ECR) plasmas. Films were deposited for a wide range of flow rate ratio of O2 to N2 at a constant Ar flow rate. Film properties were verified by characterizations of refractive index (ellipsometry), structural properties (Fourier transform infrared and Auger electron spectroscopy), intrinsic stress, and barrier strength of water penetration (thermal desorption spectroscopy). A near-stoichiometric SiOxNy (x = 1.44 and y = 0.41) film with low stress could be formed at the optimum deposition condition, under which the SiOxNy film had a refractive index of 1.54. The results of thermal desorption spectroscopy measurements showed that the SiOxNy film had a higher barrier against moisture penetration relative to deposited SiOx and SiNy films. The SiOxNy film was directly deposited on the organic EL device and the applicability was shown clearly. These results indicate that this SiOxNy film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of organic EL devices, which are required to be formed at low temperature.

    本文言語英語
    ページ(範囲)457-462
    ページ数6
    ジャーナルMaterials Research Society Symposium - Proceedings
    594
    出版ステータス出版済み - 2000
    イベントThin Films-Stress and Machanical Properties VIII - Boston, MA, USA
    継続期間: 11月 29 199912月 3 1999

    !!!All Science Journal Classification (ASJC) codes

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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