Room temperature ferromagnetism in Mn-doped γ- Ga2O 3 with spinel structure

Hiroyuki Hayashi, Rong Huang, Hidekazu Ikeno, Fumiyasu Oba, Satoru Yoshioka, Isao Tanaka, Saki Sonoda

研究成果: ジャーナルへの寄稿学術誌査読

80 被引用数 (Scopus)

抄録

Mn-doped Ga2 O3 (7 cation % of Mn) thin film has been grown on c -cut sapphire substrate using pulsed-laser deposition technique. Electron diffraction analyses by transmission electron microscopy found that the Mn-doped film shows γ phase with spinel structure, which is different from undoped film showing Β phase. No secondary phase can be detected. Combination of Mn- L2,3 near edge x-ray absorption experiments with first-principles many-electron calculations unambiguously implies that Mn atoms are located at tetrahedrally coordinated Ga sites with a valence of +2. The doped sample shows ferromagnetism up to 350 K.

本文言語英語
論文番号181903
ジャーナルApplied Physics Letters
89
18
DOI
出版ステータス出版済み - 2006
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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