Room-temperature wafer bonding of LiNbO3 and SiO2 using a modified surface activated bonding method

Ryo Takigawa, Eiji Higurashi, Tanemasa Asano

研究成果: Contribution to journalArticle

14 被引用数 (Scopus)


In this paper, we report room-temperature bonding of LiNbO3 (LN) and SiO2/Si for the realization of a LN on insulator (LNOI)/Si hybrid wafer. We investigate the applicability of a modified surface activated bonding (SAB) method for the direct bonding of LN and a thermally grown SiO2 layer. The modified SAB method using ion beam bombardment demonstrates the room-temperature wafer bonding of LN and SiO2. The bonded wafer was successfully cut into 0.5 × 0.5mm2 dies without interfacial debonding owing to the applied stress during dicing. In addition, the surface energy of the bonded wafer was estimated to be approximately 1.8 J/m2 using the crack opening method. These results indicate that a strong bond strength can be achieved, which may be sufficient for device applications.

ジャーナルJapanese Journal of Applied Physics
出版ステータス出版済み - 6 2018

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Room-temperature wafer bonding of LiNbO<sub>3</sub> and SiO<sub>2</sub> using a modified surface activated bonding method」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。