Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces

Hiroshi Tochihara, Tetsuroh Shirasawa, Takayuki Suzuki, Toshio Miyamachi, Takashi Kajiwara, Kazuma Yagyu, Shunsuke Yoshizawa, Toshio Takahashi, Satoru Tanaka, Fumio Komori

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

An epitaxial silicon-oxide monolayer of chemical composition of Si 2O3 (the Si2O3 layer) formed on hexagonal SiC(0001̄) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si 2O3 layer are found to be missing SiOn (n=1, 2, 3) molecules. The band gap of the Si2O3 layer obtained by point tunneling spectroscopy is 5.5±0.5eV, exhibiting considerable narrowing from that of bulk SiO2, 8.9eV. It is proposed that the Si2O3 layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.

本文言語英語
論文番号051601
ジャーナルApplied Physics Letters
104
5
DOI
出版ステータス出版済み - 1 1 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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