TY - JOUR
T1 - Scanning tunneling microscopy study of in situ hydrogenation of Si(110) surface
AU - Visikovskiy, Anton
AU - Yoshimura, Masamichi
AU - Ueda, Kazuyuki
PY - 2010/8/1
Y1 - 2010/8/1
N2 - The in situ hydrogenation of the Si(110) surface has been studied by scanning tunneling microscopy. It has been found that a small amount of atomic hydrogen (H) generates missing protrusion defects in the reconstructed "16 × 2" areas. In the disordered areas, a small amount of H results in the rearrangement of pentagon pairs into a local "4 × 5" structure after annealing. The saturation coverage and higher temperatures result in a new type of zigzag-like surface structure. The structures formed on Si(110) by in situ hydrogenation are significantly different from those on hydrogenated surfaces obtained by chemical methods, where 1 × 1 reconstruction is dominant.
AB - The in situ hydrogenation of the Si(110) surface has been studied by scanning tunneling microscopy. It has been found that a small amount of atomic hydrogen (H) generates missing protrusion defects in the reconstructed "16 × 2" areas. In the disordered areas, a small amount of H results in the rearrangement of pentagon pairs into a local "4 × 5" structure after annealing. The saturation coverage and higher temperatures result in a new type of zigzag-like surface structure. The structures formed on Si(110) by in situ hydrogenation are significantly different from those on hydrogenated surfaces obtained by chemical methods, where 1 × 1 reconstruction is dominant.
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U2 - 10.1143/JJAP.49.08LB05
DO - 10.1143/JJAP.49.08LB05
M3 - Article
AN - SCOPUS:78049340715
VL - 49
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 8 PART 4
M1 - 08LB05
ER -