Scanning tunneling microscopy study of in situ hydrogenation of Si(110) surface

Anton Visikovskiy, Masamichi Yoshimura, Kazuyuki Ueda

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

The in situ hydrogenation of the Si(110) surface has been studied by scanning tunneling microscopy. It has been found that a small amount of atomic hydrogen (H) generates missing protrusion defects in the reconstructed "16 × 2" areas. In the disordered areas, a small amount of H results in the rearrangement of pentagon pairs into a local "4 × 5" structure after annealing. The saturation coverage and higher temperatures result in a new type of zigzag-like surface structure. The structures formed on Si(110) by in situ hydrogenation are significantly different from those on hydrogenated surfaces obtained by chemical methods, where 1 × 1 reconstruction is dominant.

本文言語英語
論文番号08LB05
ジャーナルJapanese journal of applied physics
49
8 PART 4
DOI
出版ステータス出版済み - 8 1 2010
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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