Schottky barrier height control at metal/Ge interface by insertion of nitrogen contained amorphous layer

Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Ge is attracting great attention as a candidate of channel material for future CMOS devices and near-infrared optical devices, owing to its high intrinsic carrier mobility and narrow bandgap. One of the difficulties to realize Ge-based devices is to control of the Schottky barrier height (SBH) at metal/Ge interface. It is widely known any metal/Ge contacts show high electron barrier height (ΦBN > 0.5 eV) due to Fermi level pinning (FLP) at the metal/Ge interface. Our group found a method to alleviate the FLP, by which sputter-deposited ZrN/Ge contact showed low ΦBN (< 0.10 eV) and high hole barrier height (ΦBP > 0.56 eV). From detailed structural analyses, FLP alleviation was induced by a nitrogen contained amorphous interlayer (a-IL) formed during ZrN sputter-deposition. If we can change the kind of metal on a-IL, we may extend the control range of SBH. In this paper, we demonstrate the wide range SBH control for metal/a-IL/Ge contacts.

本文言語英語
ホスト出版物のタイトル239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - High Purity and High Mobility Semiconductors 16
編集者E. Simoen, O. Kononchuk, O. Nakatsuka, C. Claeys
出版社IOP Publishing Ltd.
ページ63-71
ページ数9
4
ISBN(電子版)9781607689171
DOI
出版ステータス出版済み - 2021
イベント239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - Chicago, 米国
継続期間: 5月 30 20216月 3 2021

出版物シリーズ

名前ECS Transactions
番号4
102
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

会議

会議239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021
国/地域米国
CityChicago
Period5/30/216/3/21

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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