Schottky source/drain Ge metal-oxide-semiconductor field-effect transistors with directly contacted TiN/Ge and HfGe/Ge structures

Keisuke Yamamoto, Takeshi Yamanaka, Kenji Harada, Takahiro Sada, Keita Sakamoto, Syuta Kojima, Haigui Yang, Dong Wang, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

16 引用 (Scopus)

抄録

Metal/Ge contacts with high Schottky barrier heights on p- and n-Ge substrates could be formed using direct sputter depositions from TiN and Hf, respectively. The barrier heights were 0.53 and 0.60 eV for the p- and n-Ge substrates, respectively, which are available to source/drains (S/Ds) in Schottky n- and p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We fabricated the n- and p-MOSFETs and demonstrated their operation. In particular, the n-MOSFET operation is the first demonstration of S/D using directly contacted metal/Ge. This work opens a method for embodying Schottky S/D Ge complementary MOS devices.

元の言語英語
記事番号051301
ジャーナルApplied Physics Express
5
発行部数5
DOI
出版物ステータス出版済み - 5 1 2012

Fingerprint

MOSFET devices
metal oxide semiconductors
field effect transistors
Sputter deposition
MOS devices
Substrates
Metals
metals
Demonstrations

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Schottky source/drain Ge metal-oxide-semiconductor field-effect transistors with directly contacted TiN/Ge and HfGe/Ge structures. / Yamamoto, Keisuke; Yamanaka, Takeshi; Harada, Kenji; Sada, Takahiro; Sakamoto, Keita; Kojima, Syuta; Yang, Haigui; Wang, Dong; Nakashima, Hiroshi.

:: Applied Physics Express, 巻 5, 番号 5, 051301, 01.05.2012.

研究成果: ジャーナルへの寄稿記事

Yamamoto, Keisuke ; Yamanaka, Takeshi ; Harada, Kenji ; Sada, Takahiro ; Sakamoto, Keita ; Kojima, Syuta ; Yang, Haigui ; Wang, Dong ; Nakashima, Hiroshi. / Schottky source/drain Ge metal-oxide-semiconductor field-effect transistors with directly contacted TiN/Ge and HfGe/Ge structures. :: Applied Physics Express. 2012 ; 巻 5, 番号 5.
@article{9ae7245a067a43c0a944dad15b5a03c8,
title = "Schottky source/drain Ge metal-oxide-semiconductor field-effect transistors with directly contacted TiN/Ge and HfGe/Ge structures",
abstract = "Metal/Ge contacts with high Schottky barrier heights on p- and n-Ge substrates could be formed using direct sputter depositions from TiN and Hf, respectively. The barrier heights were 0.53 and 0.60 eV for the p- and n-Ge substrates, respectively, which are available to source/drains (S/Ds) in Schottky n- and p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We fabricated the n- and p-MOSFETs and demonstrated their operation. In particular, the n-MOSFET operation is the first demonstration of S/D using directly contacted metal/Ge. This work opens a method for embodying Schottky S/D Ge complementary MOS devices.",
author = "Keisuke Yamamoto and Takeshi Yamanaka and Kenji Harada and Takahiro Sada and Keita Sakamoto and Syuta Kojima and Haigui Yang and Dong Wang and Hiroshi Nakashima",
year = "2012",
month = "5",
day = "1",
doi = "10.1143/APEX.5.051301",
language = "English",
volume = "5",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "5",

}

TY - JOUR

T1 - Schottky source/drain Ge metal-oxide-semiconductor field-effect transistors with directly contacted TiN/Ge and HfGe/Ge structures

AU - Yamamoto, Keisuke

AU - Yamanaka, Takeshi

AU - Harada, Kenji

AU - Sada, Takahiro

AU - Sakamoto, Keita

AU - Kojima, Syuta

AU - Yang, Haigui

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2012/5/1

Y1 - 2012/5/1

N2 - Metal/Ge contacts with high Schottky barrier heights on p- and n-Ge substrates could be formed using direct sputter depositions from TiN and Hf, respectively. The barrier heights were 0.53 and 0.60 eV for the p- and n-Ge substrates, respectively, which are available to source/drains (S/Ds) in Schottky n- and p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We fabricated the n- and p-MOSFETs and demonstrated their operation. In particular, the n-MOSFET operation is the first demonstration of S/D using directly contacted metal/Ge. This work opens a method for embodying Schottky S/D Ge complementary MOS devices.

AB - Metal/Ge contacts with high Schottky barrier heights on p- and n-Ge substrates could be formed using direct sputter depositions from TiN and Hf, respectively. The barrier heights were 0.53 and 0.60 eV for the p- and n-Ge substrates, respectively, which are available to source/drains (S/Ds) in Schottky n- and p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We fabricated the n- and p-MOSFETs and demonstrated their operation. In particular, the n-MOSFET operation is the first demonstration of S/D using directly contacted metal/Ge. This work opens a method for embodying Schottky S/D Ge complementary MOS devices.

UR - http://www.scopus.com/inward/record.url?scp=84861380433&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861380433&partnerID=8YFLogxK

U2 - 10.1143/APEX.5.051301

DO - 10.1143/APEX.5.051301

M3 - Article

AN - SCOPUS:84861380433

VL - 5

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 5

M1 - 051301

ER -