絶縁膜上におけるGe(Si)薄膜の溶融成長: Si偏析効果による大粒径化

加藤 立奨, 黒澤 昌志, 横山 裕之, 佐道 泰造, 宮尾 正信

研究成果: Contribution to journalArticle査読

抄録

Melting growth of Si-doped Ge films, i.e., Ge(Si) films, on insulator has been investigated. After rapid-thermal annealing of Ge(Si) films in the temperatures region surrounded with the liquidus curve and solidus curve of the phase diagram of the SiGe system, SiGe crystals with large-grains (15-30μm) were formed. The Si concentration profiles in the grains showed peaks at the center of grains. The peak Si concentrations were almost the same as the Si concentrations along the solidus curve at the annealing temperature. These phenomena were explained based on the formation of Si-rich micro-crystals during annealing and subsequent Si-segregated lateral-growth during cooling.
寄稿の翻訳タイトルSeed-Less Melting Growth of Ge(Si) on Insulator: Large Grain Formation by Si Segregation
本文言語Japanese
ページ(範囲)61-62
ページ数2
ジャーナル電子情報通信学会技術研究報告. OME, 有機エレクトロニクス
112
19
出版ステータス出版済み - 4 20 2012

フィンガープリント 「絶縁膜上におけるGe(Si)薄膜の溶融成長: Si偏析効果による大粒径化」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル