Selective area laser-assisted doping of SiC thin films and blue light electroluminescence

Emmanuel Paneerselvam, Toshifumi Kikuchi, Hiroshi Ikenoue, Nilesh J. Vasa, I. A. Palani, Mitsuhiro Higashihata, Daisuke Nakamura, M. S. Ramachandra Rao

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

Laser-assisted doping combined with annealing technique is used in selective areas to form a p-n junction on a SiC thin film grown by the pulsed laser deposition on a Si substrate at a temperature of 800 °C. This approach in an aluminum chloride solution and a phosphoric solution has resulted in p-SiC/n-Si and n-SiC/p-Si hetero-structures, respectively. Further, a functional in-plane p-n junction is realized side-by-side on the post-deposited SiC thin film. I-V characteristics by two probe technique showed the p-n diode characteristics. Blue light (400 nm) electroluminescence from the p-n junction on SiC thin film was observed in the forward biased condition. Further, an improvement in the I-V reverse characteristics was observed by illuminating the p-n SiC thin film with green/blue light.

本文言語英語
論文番号48LT01
ジャーナルJournal of Physics D: Applied Physics
52
48
DOI
出版ステータス出版済み - 9 12 2019

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

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