Selective n-type doping in graphene via the aluminium nanoparticle decoration approach

Xiaoling Shi, Guofa Dong, Ming Fang, Fengyun Wang, Hao Lin, Wen Chun Yen, Kwok Sum Chan, Yu Lun Chueh, Johnny C. Ho

研究成果: Contribution to journalArticle査読

16 被引用数 (Scopus)

抄録

Selective and reliable n-type doping as well as tuning the Dirac point of graphene are important for the realization of high-performance complementary circuits. In this work, we present a simple but effective technique to left shift the Dirac point of graphene transistors to induce n-type doping via thermal decoration of Al nanoparticles. The decorated discrete nanoparticles are uniformly distributed on the top of the graphene channel surface with consistent size and shape. Detailed electrical measurements reveal that the decoration can efficiently shift the Dirac point of graphene towards negative gate voltages along with the improved on/off current ratio and excellent air-stability. All these further indicate the technological potency of this doping technique for the fabrication of future CMOS graphene electronics. This journal is

本文言語英語
ページ(範囲)5417-5421
ページ数5
ジャーナルJournal of Materials Chemistry C
2
27
DOI
出版ステータス出版済み - 7 21 2014
外部発表はい

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

フィンガープリント 「Selective n-type doping in graphene via the aluminium nanoparticle decoration approach」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル