Selective photocurrent generation in the transparent wavelength range of a semiconductor photovoltaic device using a phonon-assisted optical near-field process

S. Yukutake, T. Kawazoe, T. Yatsui, W. Nomura, K. Kitamura, M. Ohtsu

    研究成果: Contribution to journalArticle査読

    31 被引用数 (Scopus)

    抄録

    In this paper, we propose a novel photovoltaic device using P3HT and ZnO as test materials for the ptype and n-type semiconductors, respectively. To fabricate an electrode of this device, Ag was deposited on a P3HT film by RF-sputtering under light illumination (wavelength λ0 = 660 nm) while reversely biasing the P3HT/ZnO pnjunction. As a result, a unique granular Ag film was formed, which originated from a phonon-assisted process induced by an optical near-field in a self-organized manner. The fabricated device generated a photocurrent even though the incident light wavelength was as long as 670 nm, which is longer than the long-wavelength cutoff λc (= 570 nm) of the P3HT. The photocurrent was generated in a wavelength-selective manner, showing a maximum at the incident light wavelength of 620 nm, which was shorter than λ0 because of the Stark effect brought about by the reverse bias DC electric field applied during the Ag deposition.

    本文言語英語
    ページ(範囲)415-422
    ページ数8
    ジャーナルApplied Physics B: Lasers and Optics
    99
    3
    DOI
    出版ステータス出版済み - 5 1 2010

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(その他)
    • 物理学および天文学(全般)

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