Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphere

R. Kanno, T. Wada, Y. Yamazaki, J. Wang, M. Isshiki, Y. Iijima

研究成果: Contribution to journalArticle査読

抄録

Diffusion behavior of Cd in volume and along dislocations in high-purity CdTe annealed in Te-saturated atmosphere has been studied by the radioactive tracer method with a serial ion-beam sputter-microsectioning technique. The temperature dependence of volume diffusion coefficients shows a bend around 773K, whereas that of the self-diffusion along dislocations shows a straight line. This suggests that the defect induced by impurities enhances the volume diffusion but does not affect the diffusion along dislocations.

本文言語英語
ページ(範囲)319-322
ページ数4
ジャーナルMaterials Science in Semiconductor Processing
6
5-6
DOI
出版ステータス出版済み - 10 2003
外部発表はい

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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