Self-heating issue of poly-Si TFT on glass substrate

Tanemasa Asano, Gou Nakagawa

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

One of critical issues of TFT for large scale integration is temperature rise of TFT due to self-heating. In this paper, we report temperature rise of poly-Si TFT during operation. The temperature was evaluated by determining the thermal resistance from the temperature-dependent negative-drain conductance. TFTs are fabricated using a laterally-grown poly-Si film. By aligning TFT channel direction with the grain growth direction, effects of grain boundary on carrier transport becomes less significant so that direct evaluation of self-heating from drain characteristic becomes possible. SOI MOSFET is also investigated. Results indicate that the thermal resistance of TFT is 40 times as large as that of SOI MOSFET. As a consequence, temperature rise of TFT reaches to 150 K even under normal operation condition. Heat dissipation path is also investigated by determining the thermal resistance of TFTs having various dimensions. Effect of stripe channel on TFT performance and temperature rise is also discussed. Results clearly indicate that design of thermal path through the gate becomes of importance for TFTs.

本文言語英語
ホスト出版物のタイトル2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
ページ15-22
ページ数8
1
DOI
出版ステータス出版済み - 12 1 2011
イベント3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III - Hong Kong, 中国
継続期間: 6 27 20117 1 2011

出版物シリーズ

名前ECS Transactions
番号1
37
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

その他

その他3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III
Country中国
CityHong Kong
Period6/27/117/1/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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