Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser

Ling Han Li, Ryo Takigawa, Akio Higo, Masanori Kubota, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

3 被引用数 (Scopus)

抄録

The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.

本文言語英語
ホスト出版物のタイトルIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
ページ230-233
ページ数4
DOI
出版ステータス出版済み - 10 2 2009
外部発表はい
イベントIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, 米国
継続期間: 5 10 20095 14 2009

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷版)1092-8669

その他

その他IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
国/地域米国
CityNewport Beach, CA
Period5/10/095/14/09

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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