Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy

T. Shirasawa, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, T. Kinoshita, S. Shin, T. Takahashi, H. Tochihara

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 引用 (Scopus)

抜粋

The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

元の言語英語
ホスト出版物のタイトルAdvanced Material Science and Technology
出版者Trans Tech Publications Ltd
ページ15-19
ページ数5
ISBN(印刷物)9783037850497
DOI
出版物ステータス出版済み - 2011

出版物シリーズ

名前Materials Science Forum
675 677
ISSN(印刷物)0255-5476
ISSN(電子版)1662-9752

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Shirasawa, T., Tanaka, S., Muro, T., Tamenori, Y., Harada, Y., Tokushima, T., Kinoshita, T., Shin, S., Takahashi, T., & Tochihara, H. (2011). Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. : Advanced Material Science and Technology (pp. 15-19). (Materials Science Forum; 巻数 675 677). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.675-677.15