Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy

T. Shirasawa, Tanaka Satoru, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, T. Kinoshita, S. Shin, T. Takahashi, H. Tochihara

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抄録

The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

元の言語英語
ホスト出版物のタイトルAdvanced Material Science and Technology
ページ15-19
ページ数5
DOI
出版物ステータス出版済み - 3 17 2011
イベント7th International Forum on Advanced Material Science and Technology, IFAMST-7 - Dalian, 中国
継続期間: 6 26 20106 28 2010

出版物シリーズ

名前Materials Science Forum
675 677
ISSN(印刷物)0255-5476

その他

その他7th International Forum on Advanced Material Science and Technology, IFAMST-7
中国
Dalian
期間6/26/106/28/10

Fingerprint

Core levels
oxynitrides
Silicon
Spectroscopy
shift
Chemical shift
silicon
Photoelectron spectroscopy
Model structures
spectroscopy
chemical equilibrium
photoelectric emission

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Shirasawa, T., Satoru, T., Muro, T., Tamenori, Y., Harada, Y., Tokushima, T., ... Tochihara, H. (2011). Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. : Advanced Material Science and Technology (pp. 15-19). (Materials Science Forum; 巻数 675 677). https://doi.org/10.4028/www.scientific.net/MSF.675-677.15

Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. / Shirasawa, T.; Satoru, Tanaka; Muro, T.; Tamenori, Y.; Harada, Y.; Tokushima, T.; Kinoshita, T.; Shin, S.; Takahashi, T.; Tochihara, H.

Advanced Material Science and Technology. 2011. p. 15-19 (Materials Science Forum; 巻 675 677).

研究成果: 著書/レポートタイプへの貢献会議での発言

Shirasawa, T, Satoru, T, Muro, T, Tamenori, Y, Harada, Y, Tokushima, T, Kinoshita, T, Shin, S, Takahashi, T & Tochihara, H 2011, Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. : Advanced Material Science and Technology. Materials Science Forum, 巻. 675 677, pp. 15-19, 7th International Forum on Advanced Material Science and Technology, IFAMST-7, Dalian, 中国, 6/26/10. https://doi.org/10.4028/www.scientific.net/MSF.675-677.15
Shirasawa T, Satoru T, Muro T, Tamenori Y, Harada Y, Tokushima T その他. Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. : Advanced Material Science and Technology. 2011. p. 15-19. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.675-677.15
Shirasawa, T. ; Satoru, Tanaka ; Muro, T. ; Tamenori, Y. ; Harada, Y. ; Tokushima, T. ; Kinoshita, T. ; Shin, S. ; Takahashi, T. ; Tochihara, H. / Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy. Advanced Material Science and Technology. 2011. pp. 15-19 (Materials Science Forum).
@inproceedings{a2d63a9972134982bf13cf38ad78215e,
title = "Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy",
abstract = "The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.",
author = "T. Shirasawa and Tanaka Satoru and T. Muro and Y. Tamenori and Y. Harada and T. Tokushima and T. Kinoshita and S. Shin and T. Takahashi and H. Tochihara",
year = "2011",
month = "3",
day = "17",
doi = "10.4028/www.scientific.net/MSF.675-677.15",
language = "English",
isbn = "9783037850497",
series = "Materials Science Forum",
pages = "15--19",
booktitle = "Advanced Material Science and Technology",

}

TY - GEN

T1 - Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy

AU - Shirasawa, T.

AU - Satoru, Tanaka

AU - Muro, T.

AU - Tamenori, Y.

AU - Harada, Y.

AU - Tokushima, T.

AU - Kinoshita, T.

AU - Shin, S.

AU - Takahashi, T.

AU - Tochihara, H.

PY - 2011/3/17

Y1 - 2011/3/17

N2 - The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

AB - The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

UR - http://www.scopus.com/inward/record.url?scp=79952548267&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952548267&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.675-677.15

DO - 10.4028/www.scientific.net/MSF.675-677.15

M3 - Conference contribution

SN - 9783037850497

T3 - Materials Science Forum

SP - 15

EP - 19

BT - Advanced Material Science and Technology

ER -