SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique

Naoki Oyanagi, Shinichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai

研究成果: Contribution to journalConference article査読

7 被引用数 (Scopus)

抄録

The growth rate of SiC bulk single crystal by sublimation was measured in real time by using the transmission X-ray technique. The growth rate obtained by transmission X-ray intensity corresponds to the growth rate measured by nitrogen marker. The growth rate increases as the growth temperature increases and as pressure decreases. While taking into account the pressure balance between the surrounding pressure and vapor pressures of seed and source, the growth rate can be calculated by mass flux from source to seed.

本文言語英語
ジャーナルMaterials Science Forum
338
出版ステータス出版済み - 1 1 2000
外部発表はい
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 10 10 199910 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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