SiC surface nanostructures induced by self-ordering of nano-facets

Tanaka Satoru, H. Nakagawa, I. Suemune

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

On-axis and vicinal 4H- and 6H-SiC(0001) surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy. We observed one-dimensionally ordered SiC surface nanostructures, which were energetically induced by self-ordering of nano-facets on any surfaces, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes were typically revealed; (0001) and high index (112̄n) that are formed by equilibrium surface phase separation. A (112̄n) surface may have a free energy minimum due to attractive step-step interactions.

元の言語英語
ページ(範囲)407-410
ページ数4
ジャーナルMaterials Science Forum
457-460
発行部数I
出版物ステータス出版済み - 2004
外部発表Yes

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flat surfaces
Nanostructures
High resolution transmission electron microscopy
Phase separation
Free energy
Etching
Atomic force microscopy
Gases
free energy
etching
atomic force microscopy
transmission electron microscopy
high resolution
gases
interactions
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

SiC surface nanostructures induced by self-ordering of nano-facets. / Satoru, Tanaka; Nakagawa, H.; Suemune, I.

:: Materials Science Forum, 巻 457-460, 番号 I, 2004, p. 407-410.

研究成果: ジャーナルへの寄稿記事

Satoru, T, Nakagawa, H & Suemune, I 2004, 'SiC surface nanostructures induced by self-ordering of nano-facets', Materials Science Forum, 巻. 457-460, 番号 I, pp. 407-410.
Satoru, Tanaka ; Nakagawa, H. ; Suemune, I. / SiC surface nanostructures induced by self-ordering of nano-facets. :: Materials Science Forum. 2004 ; 巻 457-460, 番号 I. pp. 407-410.
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