SiC/Si-dots multilayer structures formed by supersonic free jets of CH 3SiH3 and Si3H8

Yoshifumi Ikoma, Ryota Ohtani, Nobuaki Matsui, Teruaki Motooka

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

抜粋

The formation of multilayer structures of SiC/Si-dots on Si(100) was investigated using supersonic free jet chemical vapor deposition. The depth profiles of the chemical shifts were examined using Ar+ sputtering at 4 kV. It was noted that the SiC film formed on Si-dots is thinner with respect to the Si substrate. It was suggested that the SiC/Si-dots structures could be fabricated using supersonic free jet CVD.

元の言語英語
ページ(範囲)2492-2495
ページ数4
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21
発行部数6
出版物ステータス出版済み - 11 1 2003

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

フィンガープリント SiC/Si-dots multilayer structures formed by supersonic free jets of CH <sub>3</sub>SiH<sub>3</sub> and Si<sub>3</sub>H<sub>8</sub>' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用