SiC/Si-dots multilayer structures formed by supersonic free jets of CH 3SiH3 and Si3H8

Yoshifumi Ikoma, Ryota Ohtani, Nobuaki Matsui, Teruaki Motooka

    研究成果: Contribution to journalArticle査読

    6 被引用数 (Scopus)

    抄録

    The formation of multilayer structures of SiC/Si-dots on Si(100) was investigated using supersonic free jet chemical vapor deposition. The depth profiles of the chemical shifts were examined using Ar+ sputtering at 4 kV. It was noted that the SiC film formed on Si-dots is thinner with respect to the Si substrate. It was suggested that the SiC/Si-dots structures could be fabricated using supersonic free jet CVD.

    本文言語英語
    ページ(範囲)2492-2495
    ページ数4
    ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    21
    6
    出版ステータス出版済み - 11 2003

    All Science Journal Classification (ASJC) codes

    • 凝縮系物理学
    • 電子工学および電気工学

    フィンガープリント

    「SiC/Si-dots multilayer structures formed by supersonic free jets of CH <sub>3</sub>SiH<sub>3</sub> and Si<sub>3</sub>H<sub>8</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル