The formation of multilayer structures of SiC/Si-dots on Si(100) was investigated using supersonic free jet chemical vapor deposition. The depth profiles of the chemical shifts were examined using Ar+ sputtering at 4 kV. It was noted that the SiC film formed on Si-dots is thinner with respect to the Si substrate. It was suggested that the SiC/Si-dots structures could be fabricated using supersonic free jet CVD.
|ジャーナル||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版ステータス||出版済み - 11 2003|
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