SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator

Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Masanobu Miyao

研究成果: 著書/レポートタイプへの貢献会議での発言

4 引用 (Scopus)

抜粋

We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO 2 films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.

元の言語英語
ホスト出版物のタイトルTechnology Evolution for Silicon Nano-Electronics
ページ8-13
ページ数6
DOI
出版物ステータス出版済み - 3 23 2011
イベントInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE - Tokyo, 日本
継続期間: 6 3 20106 5 2010

出版物シリーズ

名前Key Engineering Materials
470
ISSN(印刷物)1013-9826

その他

その他International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE
日本
Tokyo
期間6/3/106/5/10

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Sadoh, T., Toko, K., Kurosawa, M., Tanaka, T., Sakane, T., Ohta, Y., ... Miyao, M. (2011). SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator. : Technology Evolution for Silicon Nano-Electronics (pp. 8-13). (Key Engineering Materials; 巻数 470). https://doi.org/10.4028/www.scientific.net/KEM.470.8