SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator

Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Masanobu Miyao

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

4 被引用数 (Scopus)

抄録

We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO 2 films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.

本文言語英語
ホスト出版物のタイトルTechnology Evolution for Silicon Nano-Electronics
ページ8-13
ページ数6
DOI
出版ステータス出版済み - 3月 23 2011
イベントInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE - Tokyo, 日本
継続期間: 6月 3 20106月 5 2010

出版物シリーズ

名前Key Engineering Materials
470
ISSN(印刷版)1013-9826

その他

その他International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE
国/地域日本
CityTokyo
Period6/3/106/5/10

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 材料力学
  • 機械工学

フィンガープリント

「SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル