Signal probability control for relieving NBTI in SRAM cells

Yuji Kunitake, Toshinori Sato, Hiroto Yasuura

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

18 被引用数 (Scopus)

抄録

Negative Bias Temperature Instability (NBTI) is one of the major reliability problems in advanced technologies. NBTI causes threshold voltage degradation in a PMOS transistor which is biased to negative voltage. In an SRAM cell, due to NBTI, threshold voltage degrades in the load PMOS transistors. The degradation has the impact on Static Noise Margin (SNM), which is a measure of read stability of a 6-T SRAM cell. In this paper, we discuss the relationship between NBTI degradation in an SRAM cell and the signal probability. This is because, it is the key parameter of NBTI degradation. Based on the observations, we propose a novel cell-flipping technique in order to make signal probability close to 50%. The long cell-flipping period leads to threshold voltage degradation as large as the original case where the cell-flipping technique is not applied. Thus, we employ the short flipping period to the cell-flipping technique without any stall of operations. In consequence of applying the cell-flipping technique to a register file, we can relieve threshold voltage degradation by 70% after the SRAM cell is used for 3 years.

本文言語英語
ホスト出版物のタイトルProceedings of the 11th International Symposium on Quality Electronic Design, ISQED 2010
ページ660-666
ページ数7
DOI
出版ステータス出版済み - 2010
イベント11th International Symposium on Quality Electronic Design, ISQED 2010 - San Jose, CA, 米国
継続期間: 3 22 20103 24 2010

出版物シリーズ

名前Proceedings of the 11th International Symposium on Quality Electronic Design, ISQED 2010

その他

その他11th International Symposium on Quality Electronic Design, ISQED 2010
Country米国
CitySan Jose, CA
Period3/22/103/24/10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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