抄録
Highly durable organic light emitting diodes (OLEDs) were developed by extending the doping sites. The doping sites include the doping of both hole transport layer (HTL) and emitting layer (EML). To develop these devices further, a wide variety of host and dopant materials and their combination should be examined, while the detailed mechanism of the doping that results in the enhancement in device durability should be clarified.
本文言語 | 英語 |
---|---|
ページ(範囲) | 766-768 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 75 |
号 | 6 |
DOI | |
出版ステータス | 出版済み - 8月 9 1999 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 物理学および天文学(その他)