Significant improvement of SiO 24H-SiC interface properties by electron cyclotron resonance nitrogen plasma irradiation

Haigui Yang, Dong Wang, Hiroshi Nakashima

    研究成果: Contribution to journalArticle査読

    10 被引用数 (Scopus)

    抄録

    The effect of the insertion of a SiN film on the SiO 24H-SiC interface properties was studied. The SiN interlayer was grown using electron cyclotron resonance (ECR) nitrogen plasma irradiation prior to the SiO 2 deposition. It was found that the insertion of a SiN interlayer led to a significant decrease in interface-state and fixed-charge densities in a SiO 24H-SiC gate stack. This insertion also induced elimination of the near-interface traps in the oxide. It was clarified from X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses that Si dangling bonds were terminated by nitrogen, and the SiN interlayer effectively suppressed the formation of carbon generated by the thermal reaction between SiC and O atoms.

    本文言語英語
    ページ(範囲)H1-H4
    ジャーナルJournal of the Electrochemical Society
    159
    1
    DOI
    出版ステータス出版済み - 2012

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 再生可能エネルギー、持続可能性、環境
    • 表面、皮膜および薄膜
    • 電気化学
    • 材料化学

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