TY - GEN
T1 - Silicon carbide bulk crystal growth modeling from atomic scale to reactor scale
AU - Nishizawa, Shin Ichi
PY - 2013
Y1 - 2013
N2 - The state of the art of silicon carbide crystal growth modeling is explained from the two aspects. One is the technical problems of SiC bulk single crystal growth process by sublimation method. Numerical modeling can contribute on the reactor design and process condition optimization. Then the shape of SiC grown crystal (diameter and length) can be controlled by modifying the growth crucible design. Second one is the theoretical problem of SiC polytype control. By calculating the bulk crystal energy of each polytype, and surface energy of each possible surface during growth, it is pointed out that growin surface energy has effects on the polytype stability of SiC crystals.
AB - The state of the art of silicon carbide crystal growth modeling is explained from the two aspects. One is the technical problems of SiC bulk single crystal growth process by sublimation method. Numerical modeling can contribute on the reactor design and process condition optimization. Then the shape of SiC grown crystal (diameter and length) can be controlled by modifying the growth crucible design. Second one is the theoretical problem of SiC polytype control. By calculating the bulk crystal energy of each polytype, and surface energy of each possible surface during growth, it is pointed out that growin surface energy has effects on the polytype stability of SiC crystals.
UR - http://www.scopus.com/inward/record.url?scp=84885717437&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885717437&partnerID=8YFLogxK
U2 - 10.1149/05003.0119ecst
DO - 10.1149/05003.0119ecst
M3 - Conference contribution
AN - SCOPUS:84885717437
SN - 9781607683513
T3 - ECS Transactions
SP - 119
EP - 126
BT - Gallium Nitride and Silicon Carbide Power Technologies 2
PB - Electrochemical Society Inc.
T2 - 2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -